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may 2010 doc id 15592 rev 5 1/12 12 stgw35hf60wd 35 a, 600 v ultra fast igbt features improved e off at elevated temperature minimal tail current low conduction losses v ce(sat) classified for easy parallel connection ultra fast soft recovery antiparallel diode applications welding high frequency converters power factor correction description the stgw35hf60wd is based on a new advanced planar technology concept to yield an igbt with more stable switching performance (e off ) versus temperature, as well as lower conduction losses. the device is tailored to high switching frequency operation (over 100 khz). figure 1. internal schematic diagram to-247 1 2 3 table 1. device summary order code marking (1) package packaging stgw35hf60wd gw35hf60wda to-247 tube GW35HF60WDB gw35hf60wdc 1. collector-emitter saturation voltage is classified in group a, b and c, see table 5: vce(sat) classification . stmicroelectronics reserves the ri ght to ship from any group acco rding to production availability. www.st.com
electrical ratings stgw35hf60wd 2/12 doc id 15592 rev 5 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ces collector-emitter voltage (v ge = 0) 600 v i c (1) 1. calculated according to the iterative formula: continuous collector current at t c = 25 c 60 a i c (1) continuous collector current at t c = 100 c 35 a i cp (2) 2. pulse width limited by maximum junction temperature and turn-off within rbsoa pulsed collector current 150 a i cl (3) 3. v clamp = 80% (v ces ), v ge = 15 v, r g = 10 ? , t j = 150 c turn-off latching current 80 a v ge gate-emitter voltage 20 v i f diode rms forward current at t c = 25 c 30 a i fsm surge non repetitive forward current t p = 10 ms sinusoidal 120 a p tot total dissipation at t c = 25 c 200 w t stg storage temperature ? 55 to 150 c t j operating junction temperature table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case igbt 0.63 c/w thermal resistance junction-case diode 1.5 c/w r thj-amb thermal resistance junction-ambient 50 c/w i c t c () t jmax () t c ? r thj c ? v ce sat () max () t jmax () i c t c () , () ------------------------------------------------------------------------------------------------------- =
stgw35hf60wd electrical characteristics doc id 15592 rev 5 3/12 2 electrical characteristics (t j = 25 c unless otherwise specified) table 4. static symbol parameter test conditions min. typ. max. unit v (br)ces collector-emitter breakdown voltage (v ge = 0) i c = 1 ma 600 v v ce(sat) collector-emitter saturation voltage v ge = 15 v, i c = 20 a 2.5 v v ge = 15v, i c = 20 a, t j = 125 c 1.65 v ge(th) gate threshold voltage v ce = v ge , i c = 1 ma 3.75 5.75 v i ces collector cut-off current (v ge = 0) v ce = 600 v v ce = 600 v, t j = 125 c 250 1 a ma i ges gate-emitter leakage current (v ce = 0) v ge = 20 v 100 na table 5. v ce(sat) classification symbol parameter group value unit min. max. v ce(sat) collector-emitter saturation voltage v ge = 15 v, i c = 20 a a 1.68 1.92 v b 1.88 2.17 c 2.13 2.50 table 6. dynamic symbol parameter test conditions min. typ. max. unit c ies c oes c res input capacitance output capacitance reverse transfer capacitance v ce = 25 v, f = 1 mhz, v ge = 0 - 2400 235 50 - pf pf pf q g q ge q gc total gate charge gate-emitter charge gate-collector charge v ce = 400 v, i c = 20 a, v ge = 15 v, (see figure 17 ) - 140 13 52 - nc nc nc
electrical characteristics stgw35hf60wd 4/12 doc id 15592 rev 5 table 7. switching on/off (inductive load) symbol parameter test conditions min. typ. max. unit t d(on) t r (di/dt) on turn-on delay time current rise time turn-on current slope v cc = 400 v, i c = 20 a r g = 10 ? , v ge = 15 v, (see figure 16 ) - 30 15 1650 - ns ns a/s t d(on) t r (di/dt) on turn-on delay time current rise time turn-on current slope v cc = 400 v, i c = 20 a r g = 10 ? , v ge = 15 v, t j = 125 c (see figure 16 ) - 30 15 1600 - ns ns a/s t r (v off ) t d ( off ) t f off voltage rise time turn-off delay time current fall time v cc = 400 v, i c = 20 a, r ge = 10 ? , v ge = 15 v (see figure 16 ) - 30 175 40 - ns ns ns t r (v off ) t d ( off ) t f off voltage rise time turn-off delay time current fall time v cc = 400 v, i c = 20 a, r ge = 10 ? , v ge =15 v, t j = 125 c (see figure 16 ) - 50 225 70 - ns ns ns table 8. switching energy (inductive load) symbol parameter test conditions min. typ. max. unit e on (1) e off e ts 1. eon is the tun-on losses when a typical diode is used in the test circuit in figure 18 . if the igbt is offered in a package with a co-pak diode, the co-pack diode is used as exter nal diode. igbts and diode are at the same temperature (25 c and 125 c). eon include diode recovery energy. turn-on switching losses turn-off switching losses total switching losses v cc = 400 v, i c = 20 a r g = 10 ? , v ge = 15 v, (see figure 18 ) - 290 185 475 j j j e on (1) e off e ts turn-on switching losses turn-off switching losses total switching losses v cc = 400 v, i c = 20 a r g = 10 ? , v ge = 15 v, t j = 125 c (see figure 18 ) - 420 350 770 530 j j j table 9. collector-emitter diode symbol parameter test conditions min. typ. max. unit v f forward on-voltage i f = 20 a i f = 20 a, t j = 125 c - 1.8 1.4 2.25 v v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i f = 20 a,v r = 50 v, di/dt = 100 a/ s (see figure 19 ) - 50 90 3 - ns nc a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i f = 20 a,v r = 50 v, t j =125 c, di/dt = 100 a/ s (see figure 19 ) - 135 375 5.5 - ns nc a
stgw35hf60wd electrical characteristics doc id 15592 rev 5 5/12 2.1 electrical characteri stics (curves) figure 2. output characteristics figure 3. transfer characteristics figure 4. normalized v ce(sat) vs. i c figure 5. normalized v ce(sat) vs. temperature figure 6. normalized breakdown voltage vs. temperature figure 7. normalized gate threshold voltage vs. temperature 0 50 100 150 200 0246810 v ce (v) i c (a) v ge = 15 v 7 v 8 v 9 v 10 v 11 v v ge = 6 v 0 50 100 150 200 036912 v ge (v) i c (a) v ce = 10 v 0.4 0.6 0.8 1 1.2 1.4 1.6 0 20406080 i c (a) v ce( s at) (norm) t j = -50 oc t j = 25 oc t j = 150 oc v ge = 15 v 0.6 0.8 1 1.2 1.4 1.6 -50 0 50 100 150 t j (c) v ce( s at) (norm) 10 a i c = 80 a i c = 60 a 20 a i c = 40 a 30 a i c = 5 a v ge = 15 v 0.9 0.95 1 1.05 1.1 -50 0 50 100 150 t j (c) v ces (norm) i c = 1 ma 0.6 0.7 0.8 0.9 1 1.1 1.2 -50 0 50 100 150 t j (c) v ge(th) (norm) v ge = v ce i c = 250 a
electrical characteristics stgw35hf60wd 6/12 doc id 15592 rev 5 figure 8. gate charge vs. gate-emitter voltage figure 9. capacitance variations figure 10. switching losses vs temperature figure 11. switching losses vs. gate resistance figure 12. switching losses vs. collector current figure 13. turn-off soa 0 4 8 12 16 0 30 60 90 120 150 q g (nc) v ge (v) v cc = 400 v i c = 20 a 0 1000 2000 3000 4000 5000 0 1020304050 v ce (v) c (pf) f = 1 mhz v ge = 0 c ies c oes c res 150 200 250 300 350 400 450 25 50 75 100 125 t j (c) e (j) v ce = 400 v, v ge = 15 v i c = 20 a, r g =10 ? e on e off 0 500 1000 1500 2000 0 60 120 180 240 r g ( ? ) e (j) e on e off v ce = 400 v, v ge = 15 v i c = 20 a, t j = 125 c 0 200 400 600 800 1000 10 15 20 25 30 35 40 i c (a) e (j) v ce = 400 v, v ge = 15 v r g = 10 ? , t j = 125 c e on e of f 0.1 1 10 100 1000 1 10 100 1000 v ce (v) i c (a) v ge = 15 v, r g = 10 ? t c = 150 c
stgw35hf60wd electrical characteristics doc id 15592 rev 5 7/12 figure 14. diode forward on voltage figure 15. thermal impedance ) & ! 6 & 6 4 * ?# typicalvalues 4 * ?# maximumvalues 4 * ?# maximumvalues !-v
test circuits stgw35hf60wd 8/12 doc id 15592 rev 5 3 test circuits figure 16. test circuit for inductive load switching figure 17. gate charge test circuit figure 18. switching waveform figure 19. diode recovery time waveform am01504v1 am01505v1 am01506v1 90 % 10 % 90 % 10 % v g v ce i c td(on) to n tr(ion) td(off) toff tf tr(voff) tcro ss 90 % 10 % am01507v1 i rrm i f di/dt t rr t a t b q rr i rrm t v f di/dt
stgw35hf60wd package mechanical data doc id 15592 rev 5 9/12 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark.
package mechanical data stgw35hf60wd 10/12 doc id 15592 rev 5 dim. mm. min. typ max. a4. 8 55.15 a1 2.20 2.60 b 1.0 1.40 b 1 2.0 2.40 b 2 3 .0 3 .40 c0.40 0. 8 0 d1 9 . 8 5 20.15 e 15.45 15.75 e5.45 l 14.20 14. 8 0 l1 3 .70 4. 3 0 l2 1 8 .50 ?p 3 .55 3 .65 ?r 4.50 5.50 s 5.50 to-247 mechanical data
stgw35hf60wd revision history doc id 15592 rev 5 11/12 5 revision history table 10. document revision history date revision changes 14-apr-2009 1 initial release. 03-aug-2009 2 inserted dynamic parameters on table 6 an table 7 document status prom oted from preliminary data to datasheet 02-sep-2009 3 minor text changes throughout the document removed watermark 30-sep-2009 4 inserted v ce(sat) grouping a, b and c (see table 5: vce(sat) classification ) 10-may-2010 5 inserted section 2.1: electrical characteristics (curves)
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